Growth of high crystalline quality III-V material on industry standard on-axis (001) silicon

In response to global demand for internet bandwidth, electronic interconnects must be replaced with their photonic counterparts. The most economically promising method of bringing photonics into the datacenter is through the advancements of silicon photonics. Silicon photonics represents the idea of using silicon—and its decades of manufacturing development—as a platform for photonic integration. But, achieving optical gain in the material system has proved challenging. In contrast III-V materials make excellent high gain materials and the ideal integration method would be direct epitaxy of III-V materials on silicon if the challenge of crystalline mismatch can be overcome.In this talk, he will detail recent results of they efforts to grow high crystalline quality III-V material on industry standard on-axis (001) silicon and the use of these virtual substrates for subsequent quantum dot laser growth. Through careful optimization of the III-V buffer, they have achieved dislocation densities lower than 7×106 cm-2 which, when combined with the relative insensitivity of quantum dots to defects, has allowed for world record laser performance to be achieved. The results of accelerated aging testing including extrapolated lifetimes of >65,000 hours at 60℃ will also be presented.