K. Shinozaki
Tokyo Institute of Technology, Japan
地点：唐仲英楼A213
时间：2017-10-17 10:00
Smart radiation devices (SRD) are mounted on the external surface of satellites for the purpose of self-maintaining the satellites internal temperature. SRDs are advantageous because of their light weight and do not consume power. La1-xSrxMnO3-δ (LSMO) is one of the most promising candidate materials for SRD because LSMO shows a metal-insulator transition, and thermal emissivity changes drastically. LSMO bulk tiles have been mounted on satellites as SRDs and are effective for internal temperature control. In order to improve SRD further, we prepared LSMO films for further weight reduction and effective thermal control. Furthermore, it is expected that the residual strain in LSMO films allows improved control for the metal-insulator transition temperature. In this study, the effect of different substrates and annealing on metal-insulator transition temperature of LSMO films was examined. 1.8μm-thick LSMO films were fabricated on LaAlO3, YSZ, Si and YSZ coated Si substrates by a pulsed laser deposition method, and annealed at 750, 800 and 850 oC for 3 h in ambient air. The metal-insulator transition temperature of each LSMO film was estimated from magnetization curves. LSMO films deposited on the varying substrates showed different metal-insulator transition temperatures. Also, post-annealing affected the metal-insulator transition temperature. It is proposed that these results were directly related to the the amount of oxygen deficiency and different strain conditions in the films those changed the Mn-Mn ion distance, because the metal-insulator transition in LSMO impacted the electron transition due to double-exchange interaction between Mn ions. These results indicate that the shorter in-plane lattice parameter of LSMO films becomes, the higher the metal-insulator transition temperature increases. It was concluded that metal-insulator transition temperature of LSMO thin films can be controlled by the oxygen deficiency and residual stress.
He received a B.S. in Materials Science in 1976, a M.S. in Chemical Engineering in 1978, and a Doctor of Engineering in Materials Science in 1981 both from Tokyo Institute of Technology, Japan. After holding a post-doctoral position at Tokyo Institute of Technology, he joined Toshiba Corp. from 1982 to 1986. In Metals & Ceramics Laboratory of the Toshiba R. & D. Center, he studied the development of aluminum-nitride ceramic substrate, structural silicon nitride ceramics, etc. In 1987, he engaged Department of Inorganic Materials in Tokyo Institute of Technology as Research Associate. He became Associate Professor in 1989. He became Professor in 2009. He stayed in University of Washington from 1991 to 1992 as a Visiting Scholar. He received the 54th Award of the Ceramic Society of Japan as a title of "Development of the Electroceramics Through the Control of Liquid Phase" in 2000. He received Best Paper Award in the Journal of the Ceramic Society of Japan in 2000. He received Kiyoshi Okazaki Award in 2011.His main research themes are oxide thin film, ceramic processing, nitride ceramics, and characterization of ceramics. He is a member of the following societies. The Ceramic Society of Japan, American Ceramic Society, Materials Research Society, The Chemical Society of Japan, The Japan Society of Applied Physics, The Crystallographic Society of Japan.Address : 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550, Japane-mail : 该邮件地址已受到反垃圾邮件插件保护。要显示它需要在浏览器中启用 JavaScript。