Low dimensional (0D, 1D, 2D) devices for future electronics

One of the major application targets for future electronics is wearable communication tools with low-power consumption. Tunnel field-effect-transistors (TFET) are promising since extremely low-voltage operation of switching beyond the limitation of CMOS devices would be possible. 2D materials and 1D nanowires attract attention not only because these materials would be suitable for the fabrication of TFETs, but also various novel application such as sensors, displays would be possible. Quantum computing is no longer a future technology. Recent advances in D-Wave computers based on quantum annealing and superconducting devices, and the demonstration of long spin decoherence times in isotopically-enriched Si qubits, have accelerated the research and development of this technology. The remaining challenge is large scale integration of qubits. Physically-defined coupled quantum dots (QDs) on silicon-on-insulator substrates represent potential multiple scaled qubits. In this talk, we discuss recent progress of 0D, 1D and 2D devices.