Electrostatic engineering of electronic and structural orderings in two-dimensional materials

Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials provide an attractive semiconductor option at the atomic level. These materials exhibit great promise to enable the development of novel devices in a variety of fields, including nanophotonics, valleytronics and information technology. Meanwhile, the atomic thickness of two-dimensional materials allows full access to the interior of materials through electrostatic doping. Thus, electrostatic doping becomes one main approach to exploit the fundamental physics and practical application in the 2D limit. In this talk, I will present our work in engineering of electronic and structural ordering using large population of quasi-particles, including:•Optimal thermoelectric effect in TMDs, simultaneously optimizing Seebeck coefficient and electrical conductivity.•Demonstration of structural reformation of monolayer molybdenum ditelluride (MoTe2) through electrostatic doping.